CORRELATION BETWEEN ELECTRICAL AND OPTICAL PROPERTIES OF DOPED SILICON NANOCRYSTALS
Keywords:
silicon nanocystals, doping, dark conductivity, refractive index
Abstract
We propose through this work a correlation method leading to a determination of a semi-empirical relationship between optical and electrical properties in terms of refractive index and dark conductivity of doped silicon nanocrystals based on experimental data published in literature. First, an analytical model relating the conductivity and bandgap of doped silicon nanocrystals was derived. Using an empirical expression relating the refractive index to the bandgap energy, we correlated the electrical and optical parameters of N-type nanocrystalline silicon with a semi-empirical expression. The semi-empirical relationship was found to account correctly for the experimental results and yield a reasonably good agreement in an interval of the bandgap energy variation of N-type silicon nanocrystal films. The values of the fitting parameters were calculated for the N-type silicon nanocrystal films having their bandgap energy between 1. 7 eV and 2.2 eV.
References
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[11] X J Hao, E-C Cho, C Flynn, Y S Shen, G Conibeer, M A Green, Nanotechnology Effects of boron doping on the structural and optical properties of silicon nanocrystals in a silicon dioxide matrix, Nanotechnology, 19, 424019(2008), https://doi.org/10.1088/0957-4484/19/42/424019
[12] T. Zhang, B. Simonds, K. Nomoto, B. P. Veettil, Z. Lin, I. P. Wurfl, G. Conibeer, Pulsed KrF excimer laser dopant activation in nanocrystal silicon in a silicon dioxide matrix, Citation: Appl. Phys. Lett. 108, 083103 (2016), http://dx.doi.org/10.1063/1.4942466.
[13] D. Song, E. C. Cho, G. Conibeer, C. Flynn,Y. Huang, M. A. Green, Structural, electrical and photovoltaic characterization of Si nanocrystals embedded SiC matrix and Si nanocrystals/c-Si heterojunction devices, Solar Energy Materials & Solar Cells 92 (2008) 474–481, https://doi.org/10.1016/j.solmat.2007.11.002
[14] M. Fujii, S. Hayashi, K. Yamamoto, Photoluminescence from B-doped Si nanocrystals, Journal of Applied Physics 83, 7953 (1998); https://doi.org/10.1063/1.367976
[15] M. Xie, D. Li, L. Chen, F. Wang, X. Zhu, D. Yang, The location and doping effect of boron in Si nanocrystals embedded silicon oxide film, Appl. Phys. Lett. 102, 123108 (2013), http://dx.doi.org/10.1063/1.4798834.
[16] D. Ma, J. Liu, W. Zhang, Investigation of Silicon Quantum Dots Embedded in Boron-Doped Silicon Oxide Thin Films Prepared by PECVD Applying Ar Dilution, Phys. Status Solidi A 2017, 1700682, https://doi.org/10.1002/pssa.201700682.
[17] A. Kole, P. Chaudhuri, Growth of silicon quantum dots by oxidation of the silicon nanocrystals embedded within silicon carbide matrix, AIP Advances 4, 107106 (2014); https://doi.org/10.1063/1.4897378
[18] Z. Xia, S. Huang, Structural and photoluminescence properties of silicon nanocrystals embedded in SiC matrix prepared by magnetron sputtering, Solid State Communications 150 (2010) 914–918, https://doi.org/10.1016/j.ssc.2010.02.032
[19] J. López-Vidrier, P. Löper, M. Schnabel, S. Hernández, M. Canino, C. Summonte,
S. Janz, B. Garrido, Silicon nanocrystals embedded in silicon carbide as a wide-band gap photovoltaic material, Solar Energy Materials & Solar Cells 144 (2016) 551–558, http://dx.doi.org/10.1016/j.solmat.2015.10.006
[20] W. Wensheng, W. Tianmina, Z. Chunxi, L. Guohua, H. Hexiang, D. Kun, Preferred growth of nanocrystalline silicon in boron-doped nc-Si:H Films, Vacuum 74 (2004) 69–75, , https://doi.org/10.1016/j.vacuum.2003.11.008.
[21] H. Chen, W. Z. Shen, and W. S. Wei, Photoluminescence and Raman Studies on Boron-doped Nanocrystalline Si:H Thin Films, Solid State Phenomena,121-123 (2007) pp 933-938, https://doi.org/10.4028/www.scientific.net/SSP.121-123.933
[22] H. Chen, M.H. Gullanar, W.Z. Shena, Effects of high hydrogen dilution on the optical and electrical properties in B-doped nc-Si:H thin films, Journal of Crystal Growth 260 (2004) 91–101, https://doi.org/10.1016/j.jcrysgro.2003.08.048
[23] W. He, A. Zakar, T. Roger, I. V. Yurkevich, A. Kaplan, Determination of recombination coefficients for nanocrystalline silicon embedded in hydrogenated amorphous silicon, Optics Letters Vol. 40, Issue 16, pp. 3889-3892 (2015) https://doi.org/10.1364/OL.40.003889
[24] G.Y. Hu, R.F. O'Connell, Y.L. He, M.B Yu, Electronic conductivity of hydrogenated nanocrystalline silicon films, Journal of Applied Physics 78, 3945 (1995); https://doi.org/10.1063/1.359914
[25] B.C. Pan, R. Biswas, Structure and simulation of hydrogenated nanocrystalline silicon, Journal of Applied Physics 96, 6247 (2004); https://doi.org/10.1063/1.1807524
[26] Y. L. He, G. Y. Hu, M. B. Yu, M. Liu, J. L. Wang, G. Y. Xu, Conduction mechanism of hydrogenated nanocrystalline silicon films, Phys. Rev. B 59, 15352 – (1999), https://doi.org/10.1103/PhysRevB.59.15352
[27] L. R. Wienkes, C. Blackwell, T. Hutchinson, J. Kakalios, Conduction mechanisms in doped mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films, Journal of Applied Physics 113, 233707 (2013); https://doi.org/10.1063/1.4811536
[28] X. Pi, Doping Silicon Nanocrystals with Boron and Phosphorus, J. Nanomater. (2012), Article ID 912903 , https://doi.org/10.1155/2012/912903.
[29] S. H. Hong, Y. S. Kim, W. Lee, Y. H. Kim, J. Y. Song, J. S. Jang, J. H. Park, S. H. Choi, K. J. Kim, Active doping of B in silicon nanostructures and development of a Si quantum dot solar cell, Nanotechnology 22 (2011) 425203, https://doi.org/10.1088/0957-4484/22/42/425203.
[30] D. J. Norris, A. L. Efros, S. C. Erwin, Doped Nanocrystals, Science 319, 1776 (2008), , https://doi.org/10.1126/science.1143802.
[31] B. Z. Yuan, A. Anopchenko, N. Daldosso, R. Guider,
D. Navarro-Urrios, A. Pitanti, R. Spano, L. Pavesi, Silicon Nanocrystals as an Enabling Material for Silicon Photonics, Proceedings of the IEEE (Vol. 97, Issue: 7) (2009), https://doi.org/10.1109/JPROC.2009.2015060
[32] G. Vijaya Prakash, M. Cazzanelli, Z. Gaburro, L. Pavesi, F. Iacona, G. Franzò, and F. Priolo, Nonlinear optical properties of silicon nanocrystals grown by plasma-enhanced
chemical vapor deposition, Journal of Applied Physics 91, 4607 (2002); https://doi.org/10.1063/1.1456241
[33] D. Di, H. Xu, I. Perez-Wurfl, M. A. Green, G. Conibee, Improved nanocrystal formation, quantum confinement and carrier transport properties of doped Si quantum dot superlattices for third generation photovoltaics, Prog. Photovolt: Res. Appl. (2011) https://doi.org/10.1002/pip.1230
[34] N. Gupta, B. P. Tyagi, An Analytical Model of the Influence of Grain Size on the Mobility and Transfer Characteristics of Polysilicon Thin-Film Transistors (TFTs), Physica Scripta. Vol. 71, (2005), 225–228, https://doi.org/10.1238/Physica.Regular.071a00225
[35] D. M. Caughey, R. Thomas, Carrier mobilities in silicon empirically related to doping and field, Proceedings of the IEEE, 55, (1967), 2192–2193, https://doi.org/10.1109/PROC.1967.6123
[36] W. He, Z. Li, C. Wen, H. Liu, W. Shen, Size dependence of phosphorus doping in silicon nanocrystals, Nanotechnology, 27, (2016), 425710, https://doi.org/10.1088/0957-4484/27/42/425710
[37] C.W Jiang, M. A. Green, Silicon quantum dot superlattices: Modeling of energy bands, densities of states, and mobilities for silicon tandem solar cell applications, J. Appl. Phys. 99, 114902 (2006); https://doi.org/10.1063/1.2203394
[38] X. Peng, S. Ganti, P. Sharma, A. Alizadeh, S. Nayak, S. Kumar, Novel Scaling Laws for Band Gaps of Quantum Dots, J. Comput. Theor. Nanosci. 2005, Vol. 2, No. 3, https://doi.org/10.1166/jctn.2005.202.
[39] D.K. Ghosh, L.K. Samanta, G.C. Bhar, A simple model for evaluation of refractive
indices of some binary and ternary mixed crystals, Infrared Phys. 24 (1984) 43–47.
http://dx.doi.org /10.1016/0020-0891(84)90046-0
[40] L. Mazzarella, A. B. Morales-Vilches, M. Hendrichs, S. Kirner, L. Korte, R. Schlatmann, B. Stannowski, Nanocrystalline n-Type Silicon Oxide Front Contacts for Silicon Heterojunction Solar Cells: Photocurrent Enhancement on Planar and Textured Substrates, IEEE Journal of Photovoltaics, 8, (2018). 70-78, http://dx.doi.org /10.1109/JPHOTOV.2017.2770164.
Published
2023-03-30
How to Cite
1.
Haoues H, Bouridah H, Ferrah A, Beltas N, Riad BeghoulM, Remmouche R. CORRELATION BETWEEN ELECTRICAL AND OPTICAL PROPERTIES OF DOPED SILICON NANOCRYSTALS. MatTech [Internet]. 2023Mar.30 [cited 2026Aug.10];57(2):169–173. Available from: https://mater-tehnol.si/index.php/MatTech/article/view/720
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