A SINGLE-LAYER FSS FOR S-, C-, X-, KU- AND K-BAND APPLICATIONS

  • Srigitha Surendranath 1ECE, Saveetha Engineering College, Saveetha Nagar, Thandalam, Chennai, Tamil Nadu, India
  • Varalakshmi Subramanian Department of Electronics and Communication Engineering, Bharath Institute of Higher Education and Research, Chennai, Tamil Nadu, India
  • Arthi Devarani Paulretnam Department of Electronics and Communication Engineering, RMK College of Engineering and Technology, Tamil Nadu, India
  • Elakkiya Azhagar Department of Electronics and Communication Engineering, Saveetha Engineering College, Thadalam, Chennai, Tamil Nadu, India
Keywords: ultra-wideband, frequency-selective surface, high bandwidth, polarization insensitive

Abstract

This research introduces an ultra-wideband frequency-selective surface (FSS) that offers a very good bandwidth for insulation and communication applications. It consists of two layers: a dielectric substrate layer and a metal layer. The basal layer, which is the substrate, is made of FR4; and the top patch, which is the metal, is made of copper. The FSS is constructed without using several layers or several resonators in a single unit cell. This single-sheet, planar-structure-based FSS has an ultra-level bandwidth of 20.3 GHz, ranging from 2.3 GHz to 22.6 GHz. It will be employed in microwave applications in the S, C, X, Ku, and K bands, with a centre frequency of 10.6 GHz. The polarisation and angle stability of the transverse electric (TE) and transverse magnetic (TM) modes are examined, and it was found that they are insensitive up to 90 degrees. Plots depicting the distribution of the magnetic field, surface current, and electric field are used to analyse the structure's physical mechanism. The performances from previous studies are compared and contrasted with that of the current work.

 

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Published
2023-01-25
How to Cite
1.
SurendranathS, SubramanianV, Paulretnam AD, AzhagarE. A SINGLE-LAYER FSS FOR S-, C-, X-, KU- AND K-BAND APPLICATIONS. MatTech [Internet]. 2023Jan.25 [cited 2026Jul.14];57(1):85–90. Available from: https://mater-tehnol.si/index.php/MatTech/article/view/710