COMPARATIVE STUDY OF THE RECOMBINANT ACTIVITY EFFECT AT THE GRAIN BOUNDARIES IN SILICON SOLAR CELLS

Bilal Djellil; Souad Merabet; Hachemi Bouridah

doi:10.17222/mit.2022.597

Bilal Djellil Laboratory of the Materials Studies, Department of Electronics, University of Jijel, Jijel, Algeria
Souad Merabet Laboratory of Renewable Energy, Department of Electronics, University of Jijel, Jijel, Algeria
Hachemi Bouridah Laboratory of the Materials Studies, Department of Electronics, University of Jijel, Jijel, Algeria

DOI: https://doi.org/10.17222/mit.2022.597

Keywords: recombination current density, recombination rate, carrier lifetime, effective mobility

Abstract

This work studies the effect of carrier trapping and the recombination activity at the grain boundaries in the p-layer of polysilicon solar cells with respect to the deposition temperature. The dependence of the grain size on the deposition temperature was studied in different samples of boron-doped low-pressure chemical vapor deposition (LPCVD) silicon deposits, conducted in a horizontal low-pressure atmospheric pressure reactor where the temperature varied over a range from 520 °C to about 605 °C. The obtained results show clear evidence of dependence on effective changes in the trapping effect as a function of the trapping density states, the doping level and the thickness dimension of the deposited layer.

Author Biography

Bilal Djellil, Laboratory of the Materials Studies, Department of Electronics, University of Jijel, Jijel, Algeria

¹Laboratory of the Materials Studies, Department of Electronics, University of Jijel, BP 98 Ouled Aissa, Jijel 18000, Algeria

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