DEPOSITION ANGLE AS A CONTINUOUS PARAMETER: AUTOMATED GLAD GROWTH AND STRUCTURE–PROPERTY CORRELATIONS IN SILICON THIN FILMS

Kaddour Benyahia; Ouarda Benamara; Abdelhamid Benhaya; Arsalane Chouaib Guidoum

doi:10.17222/mit.2026.1733

Kaddour Benyahia Energy and Materials Laboratory, University of Tamanrasset, Tamanrasset
Ouarda Benamara Guelma Physics Laboratory, University 8 May 1945, Guelma, Algeria
Abdelhamid Benhaya LEA, Department of Electronics, University of Batna 2, Batna, Algeria
Arsalane Chouaib Guidoum Energy and Materials Laboratory, University of Tamanrasset, Tamanrasset, Algeria

DOI: https://doi.org/10.17222/mit.2026.1733

Keywords: Silicon thin films; GLAD; Deposition angle; Nanostructures; Optical properties; Electrical transport; Structure–property relationship

Abstract

This study aims to investigate the deposition angle as a continuous control parameter for tailoring the structural, optical, and morphological properties of silicon thin films grown by glancing-angle deposition (GLAD). Silicon thin films with a thickness of approximately 400 nm were deposited on glass substrates by electron-beam evaporation using automated control of the deposition angle in the range 0–80°. In contrast to conventional studies based on a limited number of discrete deposition angles, this approach enables a more systematic investigation of the progressive evolution of film properties with deposition geometry. X-ray diffraction analysis revealed a gradual decrease in peak intensity and crystallite size with increasing deposition angle, indicating a transition from relatively dense and ordered films at low angles to increasingly disordered structures at higher angles. Optical characterization showed marked angle-dependent changes in the transmittance, absorbance, and reflectance, consistent with an enhanced porosity, stronger light scattering, and a progressive shift in the optical response. Scanning electron microscopy confirmed the morphological evolution from compact and homogeneous layers to porous tilted columnar architectures as the deposition angle increased. These results demonstrate that the deposition angle is a key parameter governing the structure–property relationship in GLAD-grown silicon thin films and provide a useful basis for tailoring their properties for optoelectronic and photonic applications.

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